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| inchange semiconductor product specification silicon npn power transistors 2sC2238 2sC2238a 2sC2238b description ? with to-220 package ? complement to type 2sa968 ? high breakdown votage applications ? power amplifier applications ? driver stage amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2sC2238 160 2sC2238a 180 v cbo collector-base voltage 2sC2238b open emitter 200 v 2sC2238 160 2sC2238a 180 v ceo collector-emitter voltage 2sC2238b open base 200 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i e emitter current -1.5 a p t total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? ?? inchange semiconductor
inchange semiconductor product specification 2 silicon npn power transistors 2sC2238 2sC2238a 2sC2238b characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sC2238 160 2sC2238a 180 v (br)ceo collector-emitter breakdown voltage 2sC2238b i c =10ma; i b =0 200 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =500a; i b =50ma 1.5 v v be base-emitter on voltage i c =500ma ; v ce =5v 1.0 v i cbo collector cut-off current v cb =160v ;i e =0 1.0 | a i ebo emitter cut-off current v eb =5v; i c =0 1.0 | a h fe dc current gain i c =100ma ; v ce =5v 70 240 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 25 pf f t transition frequency i c =100ma ; v ce =10v 100 mhz ? h fe classifications o y 70-140 120-240 ?? inchange semiconductor inchange semiconductor product specification 3 silicon npn power transistors 2sC2238 2sC2238a 2sC2238b package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) ?? inchange semiconductor |
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